Ant Lion Optimizer for Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors

A mathematical model for the effect of oxide thickness on ambient conduction is provided in Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as future IC (integrated circuit) technology, suppression ambipolar behaviour SB-CNTFET imperative. The nature contributes to a high amount leakage current. tox ≈ 49.91nm uses dielectric gate with inhibit behaviour. In an SB-CNTFET, conductance regulated by electrical field at source/drain contacts and band bending length determined tox. Therefore, prime parameter that affects barrier width subthreshold area. property presented. produced using high-K dielectrics such Zirconium dioxide. This work discusses activity SB-CNTFETs without reducing Ion current appropriate optimum thickness.